New physical model to explain logarithmic time dependence of data retention in flash EEPROM |
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Authors: | Shiro Kamohara Tsugunori Okumura |
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Institution: | Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, 1-1 Minami Osawa, Hachiouji-shi, Tokyo 192-0397, Japan |
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Abstract: | Data retention after program/erase (P/E) cycles is one of the most important reliability issues in a flash EEPROM. Electron detrapping is the main cause of data leakage in the state-of-the-art flash EEPROM. The log(t) dependence of ΔVth is a unique aspect of the electron detrapping. To explain log(t) dependence, we have assumed that after electron detrapping, the positive-ionized trap reduces the probability of electrons in the influence area being emitted from their site. Based on this assumption, we have proposed a model of detrapping which is consistent with the experimental results. |
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Keywords: | 47 50 Cd 47 54 Jk |
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