Study of S ion-assisted sulfurization of n-GaAs (1 0 0) surface |
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Authors: | H.Y. Hu |
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Affiliation: | Department of Physics, Beijing Institute of Technology, Beijing 100081, China |
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Abstract: | The chemical structure and site location of sulfur atoms on n-GaAs (1 0 0) surface treated by bombardment of S+ ions over their energy range from 10 to 100 eV have been studied by X-ray photoelectron spectroscopy and low energy electron diffraction. The formation of Ga-S and As-S species on the S+ ion bombarded n-GaAs surface is observed. An apparent donor doping effect is observed for the n-GaAs by the 100 eV S+ ion bombardment. It is found that the S+ ions with higher energy are more effective in the formation of Ga-S species, which assists the n-GaAs (1 0 0) surface in reconstruction into an ordered (1 × 1) structure upon subsequent annealing. The treatment is further extended to repair Ar+ ion damaged n-GaAs (1 0 0) surface. It is found that after a n-GaAs (1 0 0) sample is damaged by 150 eV Ar+ ion bombardment, and followed by 50 eV S+ ion treatment and subsequent annealing process, finally an (1 × 1) ordering GaAs (1 0 0) surface with low surface states is obtained. |
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Keywords: | 41.75AK 61.72. Vv 81.65. Rv 79.60.-I |
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