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Copper diffusion in TaN-based thin layers |
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| Authors: | J. Nazon J. Sarradin J.C. Tedenac |
| Affiliation: | a Université Montpellier II, Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, cc 1504, 34095 Montpellier Cedex 5, France b Laboratoire Structure, Propriétés et Modélisation des Solides (UMR 8580), Ecole Centrale de Paris, Grande Voie des Vignes, 92295 Châtenay-Malabry Cedex, France c SGF Scientific Consultancy, Arndt str.9, D-52064 Aachen, Germany |
| Abstract: | The diffusion of Cu through TaN-based thin layers into a Si substrate has been studied. The barrier efficiency of TaN/Ta/TaN multilayers of 150 nm in thickness has been investigated and is compared with that of TaN single layers. Thermal stabilities of these TaN-based thin layers against Cu diffusion were determined from in situ X-ray diffraction experiments, conducted in the temperature range of 773-973 K. The TaN/Ta/TaN barrier appeared to be more efficient in preventing Cu diffusion than the TaN single layer. |
| Keywords: | 85.40.Ls 66.30.Ny 66.30.Xj |
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