Clarification of band structure at metal-diamond contact using device simulation |
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Authors: | Tomoaki Masuzawa Yuki Kudo Hisato Yamaguchi Ken Okano |
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Affiliation: | a Department of Physics, International Christian University, 3-10-2 Osawa, Mitaka, Tokyo 181-0015, Japan b Diamond Research Centre, AIST, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
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Abstract: | The mechanism of low-threshold electron emission from heavily nitrogen-doped diamond was clarified using computer simulation. Possibility of internal field emission at metal-diamond contact was evaluated expecting that the electron injection can explain the low-threshold electron emission. As a result, it was proved that electron injection could be achieved even for a deep donor of 1.7 eV, when donor concentration exceeded 1e20 cm−3. The result was in good agreement with previous experiments. |
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Keywords: | 73.30.+y |
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