Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions |
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| Authors: | Atakan Akbay Hatun Korkut Kadir Ejderha Turgay Korkut and Abdülmecit Türüt |
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| Institution: | (1) Department of Physics, Faculty of Science and Art, Ağrı Ibrahim ?e?en University, 04100 Ağrı, Turkey;(2) Department of Physics, Faculty of Science and Art, Bing?l University, Bing?l, Turkey;(3) Department of Physics, Faculty of Science, Atat?rk University, Erzurum, Turkey; |
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| Abstract: | Different radiation and temperature effects on Schottky diodes are technologically important from radiation to sensing applications.
We discussed irradiation and temperature dependent electronic properties of Pt/n-InP Schottky contact. Firstly we fabricated
Pt/n-InP Schottky diode by magnetron sputtering technique. Then sample was exposed to 12 MeV electron irradiation. We measured
I–V characteristics in 20, 160, 300 and 400 K before and after irradiation. Changes in forward currents for 160, 300 and 400 K
were not remarkable but irradiation was effective only in 20 K slightly. Reverse currents of Pt/n-InP Schottky diode were
increased in 20, 160, 300 and 400 K by irradiation. |
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