Analysis of mechanism of carbon removal from GaAs(1 0 0) surface by atomic hydrogen |
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Authors: | P. Tomkiewicz A. Winkler Th. Chasse |
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Affiliation: | a Department of Electron Technology, Silesian University of Technology, 44-100 Gliwice, Poland b Institute of Solid State Physics, Graz University of Technology, A-8010 Graz, Austria c Institute of Physical and Theoretical Chemistry, University Tübingen, 72076 Tübingen, Germany |
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Abstract: | Etching of carbon contaminations from the GaAs(1 0 0) surface by irradiating with atomic hydrogen, which is one of the key reactions to promote high-quality thin films growth by molecular beam epitaxy (MBE), has been investigated by mass spectrometry (MS), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It is shown that during the cleaning process at room temperature a total reduction of the Auger carbon signal, accompanied by desorption of methane as major reaction product, can be observed. The reaction pathways as well as the processes responsible for the observed carbon removal are discussed in detail to give a support for etching and growth quality enhancement not only in thin films epitaxy but in all atomic hydrogen promoted gas-phase III-V semiconductor processes. |
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Keywords: | 81.05.Ea 79.60.Dp 81.65.Cf 79.20.Rf 81.70.Jb |
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