A photoemission study of the interaction of Ga with CeO2(1 1 1) thin films |
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Authors: | Tomáš Skála František Šutara Michal Škoda Vladimír Matolín |
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Institution: | a Sincrotrone Trieste, Strada Statale 14, km 163.5, I-34012 Basovizza-Trieste, Italy b Charles University, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovi?kách 2, CZ-18000 Prague 8, Czech Republic |
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Abstract: | The interaction of gallium with CeO2(1 1 1) layers was studied using standard and resonant photoelectron spectroscopy, by means of both a laboratory X-ray source and tunable synchrotron light. Firstly a 1.5-nm thick CeO2 film was grown on a Cu(1 1 1) substrate. Secondly Ga was deposited in six steps up to a thickness of 0.35 nm, at room temperature. The interaction of gallium with the oxide layer induced partial CeO2 reduction, and gallium oxidation. The photoemission data suggest that a mixed Ga-Ce-O oxide was established similarly to the Sn-Ce-O case for Sn deposited on cerium oxide layers. As a consequence, gallium-induced weakening of Ce-O bonds provides a higher number of active sites on the surface that play a major role in its catalytic behaviour. |
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Keywords: | Ceria Gallium Photoelectron spectroscopy |
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