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Selective growth of stacked InAs quantum dots by using the templates formed by the Nano-Jet Probe |
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| Authors: | S Ohkouchi Y Sugimoto N Ozaki K Asakawa |
| Institution: | a National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan b Nano Electronics Research Laboratories, NEC Corp., 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan c Center for TARA, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8577, Japan d National Institute for Material Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan |
| Abstract: | We have demonstrated the selective area growth of stacked self-assembled InAs quantum dot (QD) arrays in the desired regions on a substrate and confirmed the photoluminescence (PL) emission exhibited by them at room temperature. These InAs QDs are fabricated by the use of a specially designed atomic force microscope cantilever referred to as the Nano-Jet Probe (NJP). By using the NJP, two-dimensional arrays with ordered In nano-dots are fabricated in the desired square regions on a GaAs substrate and directly converted into InAs QD arrays through the subsequent annealing by the irradiation of As flux. By using the converted QD arrays as strain templates, self-organized InAs QDs are stacked. These stacked QDs exhibit the PL emission peak at a wavelength of 1.02 μm. |
| Keywords: | 75 41Vx 72 45Yn 71 78 Ag |
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