Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method |
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Authors: | Kow-Ming Chang Jian-Hong Lin Cheng-Yen Sun |
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Affiliation: | Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta Hsueh Road, Hsinchu 30050, Taiwan, ROC |
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Abstract: | Process temperature and thermal budget control are very important for high-k dielectric device manufacturing. This work focuses on the characteristics of low temperature activated nickel silicide/silicon (M/S) interface formed by implant into silicide (IIS) method. By combining SIMS, C-V, I-V, and AFM measurements in this work, it provides a clear picture that the high dopant activation ratio can be achieved at low temperature (below 600 °C) by IIS method. From SIMS and C-V measurements, high dopant activation behavior is exhibited, and from I-V measurement, the ohmic contact behavior at the M/S junction is showed. AFM inspection displays that under 2nd RTA 700 °C 30 s no agglomeration occurs. These results suggest that IIS method has the potential to integrate with high-k dielectric due to its low process temperature. It gives an alternate for future device integration. |
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Keywords: | 61.72.Tt 81.20.&minus n |
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