Field emission property of copper nitride thin film deposited by reactive magnetron sputtering |
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Authors: | T. Wang |
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Affiliation: | Department of Physics, Lanzhou University, Lanzhou 73000, PR China |
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Abstract: | Copper nitride (Cu3N) thin film was deposited on silicon (Si) substrate by reactive magnetron sputtering method. X-ray diffraction measurement showed that the film was composed of Cu3N crystallites with anti-ReO3 structure and exhibited preferential orientation of [1 0 0] direction. The field emission (FE) result showed that Cu3N film had a turn-on electric field of about 3 V/μm at a current density of 1 μA/cm2 and a current density of 700 μA/cm2 was obtained at the electric field of 24 V/μm. The emission mechanism inferred by Fowler-Nordheim (FN) plot is shown as following: thermal electron emission at low field region and tunneling electron emission at high field region. |
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Keywords: | Semiconductors Thin films X-ray diffraction Electronic transport |
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