Structural, optical properties and band gap alignments of ZrOxNy thin films on Si (1 0 0) by radio frequency sputtering at different deposition temperatures |
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| Authors: | L.Q. Zhu Q. Fang J.P. Zhang G. He |
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| Affiliation: | a Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
b London Centre for Nanotechnology and Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom |
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| Abstract: | ZrOxNy thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrOxNy thin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrOxNy thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrOxNy thin films and therefore, the decreased optical band gap (Eg) values as a result of the increased valence-band maximum and lowered conduction-band minimum. |
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| Keywords: | 73.20.At 77.55.+f 78.20.Ci |
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