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“Temperature oscillation” as a real-time monitoring of the growth of 3C-SiC on Si substrate |
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| Authors: | Eiji Saito Atsushi Konno Kanji Yasui Tetsuo Endoh Maki Suemitsu |
| Affiliation: | a Center for Interdisciplinary Research, Tohoku University, 6-3 Aramaki aza-Aoba, Aoba-ku, Sendai 980-8578, Japan b Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka 940-2188, Japan c Department of Materials Science and Technology, Hirosaki University, Hirosaki 036-8561, Japan d Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan e Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan |
| Abstract: | Pyrometric interferometry has been observed during gas-source molecular beam epitaxy (GSMBE) of 3C-SiC on Si substrate using monomethyl silane. The period of the “temperature oscillation” is shown to correspond to λ/2n, with the λ and n being the wavelength used in the monochromatic optical pyrometry and the refractive index of the grown film, respectively. As is the case for other heteroepitaxies, pyrometric interferometry may provide a feasible real-time monitoring method for the growth of 3C-SiC film on Si substrates. |
| Keywords: | Pyrometric interferometry 3C-SiC GSMBE Heteroepitaxy |
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