Area-selectively sputtering the RuO2 nanorods array

The RuO₂ nanorods array is grown selectively on the SiO₂-patterned sapphire (SA) wafers using reactive sputtering. The area-selectivity is attributed to an early nucleation of RuO₂ and its fast surface coverage on SA (1 0 0) and (0 1 2), in contrast to the sluggish nucleation on glassy SiO₂ in the initial sputtering period. The growth domain is explored by investigating the temperature windows at sputtering power 40, 50, and 60 W. The low-temperature bound is limited by the mobility of precursors on SiO₂ surface, which enables the precursors to depart before aggregating into a large size to smear the non-growth region. The high-temperature bound is set by the horizontal growth which enlarges the rod width and deteriorates its one-dimensional feature. The temperature window shrinks with increasing sputtering power. The X-ray photoelectron spectra indicate the as-sputtered rod surface is ruthenium rich. The X-ray diffraction analysis shows that RuO₂ growth on SA (1 0 0) and (0 1 2) follows the epitaxial relations between RuO₂ and SA crystals.