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Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition |
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| Authors: | SW Lee PS Chen MH Lee C-H Lee |
| Institution: | a Institute of Materials Science and Engineering, National Central University, Jhong-Li 32001, Taiwan, ROC b Department of Materials Science and Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan, ROC c Department of Chemical and Materials Engineering, National Central University, Jhong-Li 32001, Taiwan, ROC d Institute of Electro-optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan, ROC e Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC |
| Abstract: | C2H4 mediations were used to modify the Stranski-Krastanow growth mode of Ge dots on Si(0 0 1) at 550 °C by ultra-high vacuum chemical vapor deposition. With appropriate C2H4-mediation to modify the Si surface, the elongated Ge hut clusters can be transformed to highly uniform Ge domes with a high Ge composition at the core. These C2H4-mediated Ge dots, almost bounded by {1 1 3} facets, have an average diameter and height of 55 and 9 nm, respectively. We propose two major mechanisms to depict the formation of these C2H4-mediated Ge dots: (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation, and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. This work provides a useful scheme to tune the topography of Ge dots in an UHV/CVD condition for possible optoelectronic applications. |
| Keywords: | 68 65Hb 68 65 Ac 68 37 Ps 61 72 Ff |
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