Electron transport of step-shaped graphene nanoribbon |
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Authors: | Haidong Li Haijun LiYisong Zheng Jinzhong Niu |
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Affiliation: | a Department of Mathematical and Physical Sciences, Henan Institute of Engineering, Zhengzhou 451191, China b The Department of Energy and Environment, Zhongyuan University of Technology, Zhengzhou 450007, China c National Laboratory of Superhard Materials, Department of Physics, Jilin University, Changchun 130023, China |
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Abstract: | In this work, we report a theoretical study of the electronic transport through a step-shaped graphene nanoribbon by the tight-binding method. We found that the conductance suppression near the Dirac point is pervasive, and the top boundary configuration is irrelevant; this arises from the antiresonance effect associated with an edge state localized at the transition edge of the top layer of graphene nanoribbon. In addition, the conductance can be easily tuned from zero to unity by a gate bias in the bilayer graphene nanoribbon, this feature will help us to realize the electric nanoswitch. |
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Keywords: | Graphene Conductance Antiresonance |
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