Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Numerical optimization of In-mole fractions and layer thicknesses in Al_xGa_1−xN/AlN/GaN high electron mobility transistors with InGaN back barriers

Authors:	O. Kelekci S.B. LisesivdinS. Ozcelik E. Ozbay

Affiliation:	^a Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara, Turkey ^b Nanotechnology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey ^c Department of Physics, Bilkent University, Bilkent, 06800 Ankara, Turkey ^d Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800 Ankara, Turkey

Abstract:	The effects of the In-mole fraction (x) of an In_xGa_1−xN back barrier layer and the thicknesses of different layers in pseudomorphic Al_yGa_1−yN/AlN/GaN/In_xGa_1−xN/GaN heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrödinger-Poisson equations. Strain relaxation limits were also calculated for the investigated Al_yGa_1−yN barrier layer and In_xGa_1−xN back barriers. From an experimental point of view, two different optimized structures are suggested, and the possible effects on carrier density and mobility are discussed.

Keywords:	AlGaN/AlN/GaN HEMT Schrö dinger Poisson 2DEG InGaN Back barrier
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