Thiophene‐S,S‐dioxidized Indophenine: A Quinoid‐Type Building Block with High Electron Affinity for Constructing n‐Type Polymer Semiconductors with Narrow Band Gaps |
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Authors: | Dr Yunfeng Deng Bin Sun Yinghui He Jesse Quinn Dr Chang Guo Prof?Dr Yuning Li |
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Institution: | Department of Chemical Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario, Canada |
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Abstract: | Three thiophene‐S,S‐dioxidized indophenine (IDTO) isomers, 3 a (E,E,E), 3 b (Z,E,E), and 3 c (Z,E,Z), were synthesized by oxidation of an indophenine compound. 3 b and 3 c could be converted into the most‐stable 3 a by heating at 110 °C. An IDTO‐containing conjugated polymer, PIDTOTT, was prepared using 3 a as a comonomer through a Stille coupling reaction, and it possesses a narrow band gap and low energy levels. In organic field effect transistors (OFETs), PIDTOTT exhibited unipolar n‐type semiconductor characteristics with unexpectedly high electron mobility (up to 0.14 cm2 V?1 s?1), despite its rather disordered chain packing. |
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Keywords: | isomers molecular electronics polymers semiconductors structure elucidation |
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