Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities |
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| Authors: | Dr. Shengli Zhang Meiqiu Xie Dr. Fengyu Li Zhong Yan Prof. Dr. Yafei Li Erjun Kan Wei Liu Prof. Dr. Zhongfang Chen Prof. Haibo Zeng |
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| Affiliation: | 1. Institute of Optoelectronics & Nanomaterials, Jiangsu Ke, Laboratory of Advanced Micro & Nano Materials and Technology, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, China;2. Department of Chemistry, Institute for Functional Nanomaterials, University of Puerto Rico, Rio Piedras, San Juan, PR, USA;3. College of Chemistry and Materials Science, Jiangsu Key Laboratory of Biofunctional Materials, Nanjing Normal University, Nanjing, China |
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| Abstract: | Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two‐dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm2 V?1 s?1. Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics. |
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| Keywords: | 2D semiconductors broadband photoresponse density functional calculations Group 15 monolayers high mobility |
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