Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB/MgO structures |
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Authors: | Young-Wan Oh Kyung-Woong Park Byong-Guk Park |
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Institution: | 1. Department of Materials Science and Engineering, KAIST, Daejeon 34141, South Korea;2. Research and Development Division, SK Hynix Semiconductor Inc., Gyeonggi-do 17336, South Korea |
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Abstract: | We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (Vg) exceeds a critical value, and it persists even after removing Vg. This is in contrast to the volatile VCMA effect and its linear dependence on Vg in a sample with W UL. Furthermore, we demonstrate that the volatility of the VCMA effect can be modified by introducing a Ta/W bilayer, enabling arbitrary control of the magnetic properties via VCMA effect. |
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Keywords: | Electric-field effect Perpendicular magnetic anisotropy Underlayer dependence Voltage controlled magnetic anisotropy |
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