Zur Kinetik der Spinellbildung von β-Ga2O3 mit zweiwertigen Oxiden. I. Die Festkörperreaktion von β-Ga2O3 mit NiO |
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Authors: | W Laqua B Reuter |
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Institution: | Institut für Anorganische und Analytische Chemie der Technischen Universität Berlin, Berlin, Germany |
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Abstract: | The solid state reaction in a sandwich type diffusion couple of NiO and β-Ga2O3 has been investigated between 1240 and 1550°C in air and inert gas atmosphere.Optical microscope and X-ray methods are used to identify the reaction product, which is a singlephased spinel of the general formula . The homogeneity range of the spinel phase was investigated by X-ray methods; there is a high solubility of β-Ga2O3 in the spinel lattice.The growth of the thickness of the reaction layer follows a parabolic rate law, and therefore a diffusion process must be rate determining. The activation energy of the rate controlling step is 82 kcal/mole.Pt-marker experiments are not sufficient for determining the reaction mechanism. Investigations with an electron-probe microanalyzer, an connection with a modified marker technique, resulted in a Wagner-mechanism of counterdiffusion of cations for formation of nickel-gallium spinel; the total amount in Ga3+ ions is lost for spinel formation before there is an appreciable solubility of gallium in NiO. |
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