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Magnetoresistance in amorphous germanium
Authors:AH Clark  Marvin M Cohen  M Campi  HPD Lanyon
Institution:University of Maine at Orono, Orono, Maine 04473, USA;Harry Diamond Laboratories, Washington, D.C. 20438, USA;Worcester Polytechnic Institute, Worcester, Mass. 01609, USA
Abstract:The magnetoresistance of evaporated amorphous germanium films ranging in thickness from 200 Å to several microns has been measured in the temperature range 77 K < T < 300 K for magnetic fields ranging from 5 G to 100 kG. The results are in general agreement with those of Mell and Stuke. Various models which attempt to account for the magnetoresistance are discussed, but it is concluded that the origins of this effect are not understood at this time. The magnetoresistance measured at 77 K in the presence of a high electric field (45 000 V/cm) shows the same behavior as obtained for low electric fields.
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