Low-density band-filling in strained InAs quantum wells |
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| Authors: | E Tournie O Brandt K H Ploog |
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| Institution: | (1) Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, W-7000 Stuttgart 80, Germany;(2) Present address: Fachbereich Materialwissenschaft, Technische Hochschule Darmstadt, W-6100 Darmstadt, Germany;(3) Present address: Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, 661 Hyogo, Japan |
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| Abstract: | We study the low-temperature photoluminescence (PL) of strained InAs single quantum wells (SQWs) embedded in a Ga0.47In0.53As matrix grown on InP substrates by modified solid-source molecular beam epitaxy. The spectra are interpreted in the frame of a two-level rate equation model describing the carrier dynamics in the structures. We show that band-filling occurs in these QWs for an excitation power as low as 30 Wcm–2. Moreover, the spectra reveal that the band-filling results from the rapid population of the hole subband. This observation highlights the low in-plane heavy-hole mass in the compressively strained film. Our results therefore demonstrate the high potential of InAs/Ga0.47In0.53As QW nonlinear optical devices operating in the mid-IR wavelength range. |
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| Keywords: | 78 65 Fa 71 35 +z 73 20 Dx |
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