Diamond epitaxy: Basics and applications |
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| Institution: | 1. Institute of Applied Physics, RAS, Nizhny Novgorod, Russia;2. Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia;1. Institute of Physics, Academy of Sciences Czech Republic v.v.i, Na Slovance 2, 182 21 Prague 8, Czech Republic;2. Faculty of Biomedical Engineering, Czech Technical University in Prague, Sitna sq. 3105, 272 01 Kladno, Czech Republic;3. Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble, France;4. CNRS, Inst. NEEL, F-38042 Grenoble, France;5. Groupe d''Etude de la Matière Condensée (GEMaC), Université Versailles St Quentin, CNRS, Versailles 78035, France;6. Institut d''Electronique, de Microélectronique et de Nanotechnologie (IEMN), F-59652 Villeneuve d''Ascq, France;7. Hasselt University, Institute for Materials Research (IMO), Wetenschapspark 1, B-3590 Diepenbeek, Belgium;8. IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek, Belgium;1. Groupe d''Etude de la Matière Condensée (GEMaC), Université de Versailles St Quentin en Yvelines, CNRS, Université Paris Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France;2. Université de Lyon, Ecole Centrale de Lyon, INL-UMR5270-CNRS, Ecully, France;3. Paris 13, Sorbonne Paris Cité, Laboratoire des Sciences des Procédés et des Matériaux (CNRS UPR 3407), Villetaneuse, France;4. CEA, LIST, Diamond Sensors Laboratory, Gif sur Yvette, France;1. CEA, LIST, Diamond Sensors Laboratory, F-91191 Gif-sur-Yvette, France;2. Institut des Nanotechnologies de Lyon (INL — CNRS, UMR 5270), École Centrale de Lyon, 36 av. Guy Collongue, 69134 Ecully cedex, France;3. GEMAC, Université Versailles St. Quentin, France;4. LSPM, Université Paris 13, Sorbonne Paris Cité, CNRS, 93430 Villetaneuse, France |
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| Abstract: | Diamond has been used as cutting tools, and also has recently attracted extensive attention as a semiconductor. In the review, its properties and prospects of its electronic devices are shown. Then, principles of crystal growth methods, such as high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods, are described. Next, current understanding of defects such as dislocations and stacking faults is described. Further, for the future electronic applications, the present status of wafer technology and impurity doping are described. Finally, the electronic devices made of diamond semiconductors are shown. |
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