Growth of semiconductor silicon crystals |
| |
| Institution: | 1. National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba 305-8569, Japan;2. Graduate School of Natural Sciences, Nagoya City University, Yamanohata 1, Mizuho-cho, Mizuho-ku, Nagoya, Aichi 467-8501, Japan;3. Faculty of Science, Hokkaido University, N10 W8, Kita-ku, Sapporo, Hokkaido 060-0810, Japan;4. Computer Center, Gakushuin University, Mejiro 1-5-1, Toshima-ku, Tokyo 171-8588, Japan |
| |
| Abstract: | This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
