Au/p-CZT晶体的光致发光以及电学性能研究

对比了CZT晶片经腐蚀与钝化表面处理的PL谱,结果表明NH4F/H2O2作为CZT晶体表面钝化剂,钝化后CZT晶体表面陷阱态密度减小到最低程度,同时减小了与Cd空位复合有关的深能级杂质浓度。用Agilent 4339B高阻仪进行CZT晶片I-V特性测试以及Agilent 4294A高精度阻抗分析仪进行CZT晶片的C-V特性测试,结果表明钝化均能不同程度提高Au/p-CZT接触的势垒高度,减小了漏电流。主要原因是在CZT表面钝化生成的TeO2氧化层增加接触势垒高度,并减小了电荷因隧道效应而穿过氧化层的几率。

Study on PL and Electrical Properties of Au/p-CZT Crystal

By comparing the photoluminescence(PL) spectrum of etching and passivation surface of the p-CZT,potoluminescence(PL) spectra confirmed that using NH_4F/H_2O_2 as agent,the passivation treatment minimized the surface trap state density and decreased the deep level defects related to recombination of Cd vacancies.I-V and C-V characteristics of Au/p-CZT contacts with different surface treatments were measured by Agilent 4339B high resistance meter and agilent 4294A precision impedance analyzer,respectively.It was shown that etching and passivation could increase the barrier height of the Au/p-CZT and decrease the leakage current.The major reason was that passivation increased the barrier height of Au/p-CZT contacts and possibility for electrons through the TeO_2 oxide was smaller.