Properties of ZnSe films pulse electrodeposited in the presence of phosphotungstic acid

ZnSe films were pulse-electrodeposited on conducting glass substrates with and without the addition of phosphotungstic acid. X-ray diffraction studies indicated the formation of single phase cubic ZnSe. Addition of phosphotungstic acid resulted in films with nanocrystallites. The band gap of the films was found to increase due to addition of phosphotungstic acid. The films had a crystallite size of the order of 15nm and a surface roughness of 1.8nm. Laser Raman studies exhibited the LO phonon peaks of ZnSe. The films were found to possess a slight excess of Se as evident from the energy dispersive X-ray analysis measurements.