Size effect on multiferroicity of GdMn2O5 nanorods |
| |
| Institution: | 1. Department of Physics, Chung Yuan Christian University, 200, Chung Pei Rd., Chung Li 32023, Taiwan;2. Institute of Physics, Academia Sinica, 128 Sec. 2, Academia Rd., Nankang, Taipei 11529, Taiwan;1. Department of Physics, Saratov State University, 83 Astrakhanskaya Street, Saratov, 410012, Russia;2. Institute for Applied Materials – Applied Materials Physics, Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen 76344, Germany;3. Institute for Metals Superplasticity Problems of RAS, Ufa 450001, Russia;5. Institute of Molecule and Crystal Physics, Ufa Federal Research Center of RAS, Ufa 450075, Russia;1. Department of Physics, Bahauddin Zakariya, University Multan, 60800, Pakistan;2. Department of Physics, College of Science, Princess Nourah Bint Abdulrahman University, 11671, Riyadh, Saudi Arabia;3. Department of Physics, Faculty of Science, Taibah University, Medina, Saudi Arabia;4. Department of Physics, University of Education, Lahore, Dera Ghazi Khan Campus., Pakistan;5. Department of Zoology, faculty of Science, Ghazi University Dera Ghazi Khan, Pakistan;6. Department of Mathematics, Khwaja Fareed University of Engineering and Information Technology, Abu Dhabi Road, Rahim Yar Khan;1. Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC;2. R&D Center for Membrane Technology, Center for Nanotechnology, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC |
| |
| Abstract: | Four GdMn2O5 nanorod samples of various axial lengths (〈LC〉) along the c axis were synthesized. The antiferromagnetic and ferroelectric ordering disappeared as 〈LC〉 decreased to 66 and 55 nm. Various ferroic critical sizes were observed for the two types of domain sizes. Between T = 18 and 26 K, a charge ordering X-ray diffraction peak appeared at 〈LC〉 = 79 nm. This peak was associated with structural distortion and axial length. The broken multiferroicity of the GdMn2O5 nanorods limits their practical application. For applications in memory devices, the estimated maximal capacity is approximately 650 Gbits/in2. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
