用ODLTS法研究ZnSe:Ga晶体中的自激活深能级

本文用光学深能级瞬态谱(ODLTS)方法研究了ZnSe:Ga晶体中的自激活(SA)深受主能级。首次用ODLTS技术测量了ZnSe:Ga晶体中与SA中心相应的深受主能级为0.65eV。文中还研究了该深受主中心在晶体中的空间分布。

STUDY OF SELF-ACTIVATED DEEP CENTER IN ZnSe:Ga CRYSTALS BY ODLTS TECHNIQUE

Many authors have investigated the self-activated center(SA) in ZnSe crystals[1-4]. It is known that the chemical structure of the SA center ascribes to a FZn-D complex, here VZn is a Zn vacancy and D is a donor,and the acceptor related to the SA center is located at 0.65-0.75eV[5,6] or at 0.5~0.6eV[7] above the valance band. In this paper a deep acceptor level of Ev+0.65eV related to the SA center is determined for the first time by ODLTS technique[8-11]. Nominally undoped ZnSe crystals used in this study were grown by sublimation in our laboratory[12-13]. Dice of ZnSe were annealed in molten Zn-Ga alloy with different concentration of Ga at 900℃ for about 100h. ZnSe.Ga MS diodes were prepared by making In ohmic contact on one face of a die and evaporating Au potential barrier electrode on to the opposite face.