Investigation of Al diffusion in different oxide thin-film layers by SNMS/HFM method |
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| Authors: | Hubert Paulus Susanne Kornely Janos Giber Karl -Heinz Müller |
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| Institution: | (1) Institut für Technologie- und Wissenstransfer, Lübecker Ring 2, D-59494 Soest, Federal Republic of Germany;(2) Siemens AG ZFE, Postfach 830953, D-81739 München, Federal Republic of Germany;(3) Department of Atomic Physics, Technical University of Budapest, Budafokî ût 8, H-1521 Budapest, Hungary;(4) FB Elektrische Energietechnik der Universität-GH Paderborn Abteilung Soest, Lübecker Ring 2, D-59494 Soest, Federal Republic of Germany |
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| Abstract: | Depth profiles of Ga2O3/a-SiO2/Al2O3- substrate, Ga2O3/a-Si3N4/Al2O3- substrate, and Ga2O3/Al2O3 substrate thin layers were determined by the SNMS/HFM method. Al diffusion from the Al2O3 substrate was investigated after 50, and in some cases after 600 hours of heat treatment time at different temperatures (600 °C,850 °C,950 °C,1050 °C and 1150 °C). The diffusion coefficient of Al at 850 °C was found to be D
Al=8.7 * 10–18 cm2/s in amorphous SiO2; D
Al=1.5*10–17 cm2/s in amorphous Si3N4 and D
Al=5.5* 10–16 cm2/s in Ga2O3 at 600 °C, respectively. The possible diffusion mechanism is explained in terms of the metal-oxygen bond-strengths. Although the studied materials have high resistivity at room temperature, the applied SNMS/HFM method has proven to be an efficient surface analytical tool even in these cases.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday |
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| Keywords: | Al diffusion metal-oxides SNMS/HFM depth profiling |
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