| 二元化合物半导体的能带结构 |
| |
| 引用本文： | 赵深,赵源. 二元化合物半导体的能带结构[J]. 高等学校化学学报, 1982, 3(2): 224 |
| |
| 作者姓名： | 赵深 赵源 |
| |
| 作者单位： | 北京大学技术物理系 |
| |
| 摘 要： | 本文用LCBOMO法计算了属于元素半导体和AB型、AB2型化合物半导体的十种共价结构的能带。所得结果说明:它们的禁带宽度Eg都可统一地表为键能和邻键间共轭积分的线性函数,与共价结构的形式无关。给出许多文献用键性质归纳Eg数值规律的理论基础。
|
| 收稿时间： | 1980-12-31 |
ON THE ELECTRONIC BAND STRUCTURE OF BINARY SEMICONDUCTORS |
| |
| Zhao shen,Zhao Yuan. ON THE ELECTRONIC BAND STRUCTURE OF BINARY SEMICONDUCTORS[J]. Chemical Research In Chinese Universities, 1982, 3(2): 224 |
| |
| Authors: | Zhao shen Zhao Yuan |
| |
| Affiliation: | Department of Technical Physics, Peking University, Beijing |
| |
| Abstract: | The band structures of ten semiconductors of A,ABand AB2 types have been calculated by LCBO MO method. The results showed that the band gaps Eg can generally be expressed as a linear function of the bond energy and the resonance integrals between the neighbouring bonds, irrespective of the covalent structural types of the semiconductors. This provides a theoretical background for the empirical expressions between Eg and some properties of the chemical bonds reported in the literature. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《高等学校化学学报》浏览原始摘要信息 |
|
点击此处可从《高等学校化学学报》下载全文 |
|
