Radiation-induced E″ centers in crystalline SiO2

Electron spin resonance has been used to study three similar, but distinct, S = 1 defects (labelled E″ centers) in high-quality synthetic quartz crystals. These centers are produced by electron irradiation and their concentrations depend on the irradiation temperature, the nature of previous irradiations and thermal anneals, and whether the sample is swept or unswept. The radiation-induced mobility of interstitial alkali ions (Li⁺ and Na⁺) correlates with the production of E″ centers.