Bound excitons in p-doped GaAs quantum wells |
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Authors: | R.C. Miller A.C. Gossard W.T. Tsang O. Munteanu |
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Affiliation: | Bell Laboratories, Murray Hill, New Jersey 07974, USA |
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Abstract: | Photoluminescence attributed to excitons bound to neutral impurities has been observed from GaAs quantum wells in AlxGa1?xAs-GaAs heterostructures grown by molecular beam epitaxy. The quantum wells were either doped with [Be] ≈ 1017 cm-3 or Zn-diffused. At low temperatures both single and multiple quantum wells exhibited this extrinsic luminescence which is ascribed to the radiative recombination of the n=1 ground state heavy hole exciton E1h bound to a neutral acceptor Ao. The dissociation energy ED of the Ao-E1h complex is obtained directly from the measured separation of this extrinsic peak from the intrinsic E1h free exciton peak. For 46Å wide GaAs wells, ED=6.5meV and ED decreases with increasing well width. |
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