Neutron-transmutation doping of GaAs — as studied by ESR |
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| Authors: | J Schneider U Kaufmann |
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| Institution: | Fraunhofer-Institut für Angewandte Festkörperphysik, D-7800 Freiburg, W. Germany |
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| Abstract: | Neutron (n0) transmutation doping of GaAs has been monitored by electron spin resonance (ESR). Strong evidence was obtained that, apart from fast neutron impact, AsGa antisite defects are also created by the γ- and β-emissions following thermal n0-capture. The AsGa defects, forming deep midgap states, anneal out at 500°C. |
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