Stress dependent kinetics of electron-hole drops in uniaxially deformed silicon

The decay of electron-hole drops in silicon is studied as a function of uniaxial stress applied along the <111 > and <100 > crystallographic directions. For <111 > stress, the decay kinetics can be explained in terms of Auger recombination. In contrast, for <100 > stress, the experimental decay is consistent with a model of free exciton evaporation from droplets rather than Auger recombination.