Static dielectric constant of disordered organic quasi one-dimensional conductors: Localization by defects |
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| Authors: | A Jànossy K Holczer PL Hsieh CM Jackson A Zettl |
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| Institution: | 2. Central Research Institute for Physics, Budapest 114 POB 49, Hungary;1. Department of Physics, University of California, Los Angeles, California 90024, USA |
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| Abstract: | We have measured the low temperature dielectric constant ? of two similar quasi one-dimensional organic conductors, N-Me-iso Qn(TCNQ)2 and Qn(TCNQ)2. For N-Me-iso Qn(TCNQ)2 below 10 K, ? is independent of temperature and is frequency independent in the range 5 × 105 Hz to 9 × 109 Hz, within the 50% experimental uncertainty. Thus we believe the low temperature microwave dielectric constant to be a good approximation of the static value in this salt. For Qn(TCNQ)2 at low temperatures, the relation ? ∝ (c+c0)-2 holds, where c is the defect concentration and c0 is an effective defect concentration of the nominally pure material. This relation is predicted by the model of interrupted metallic strands with energy spacings larger than kT, and it indicates that electrons are strongly localized by defects along the conducting chains. |
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