Non-geminate recombination in amorphous silicon |
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Authors: | F Boulitrop DJ Dunstan |
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Institution: | Centre d''Etudes Nucléaires de Grenoble, LETI/CE and DRF/RM, 85X - 38041 Grenoble Cedex, France |
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Abstract: | The excitation power dependence of the light-induced EPR signal in intrinsic a-Si: H is found to be sub-linear over the entire accessible range of excitation power. This result is shown to require a distant-pair model of the recombination of the carriers giving the LESR. If, as is thought, the same carriers give LESR and the 1.4 eV photoluminescence band, we show that the luminescence is also distant-pair. |
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