Reduction of the off-state current of polysilicon thin-filmtransistors by means of a polysilicon buffer layer |
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Authors: | Hamada H Hirano K Goda N Abe H Hasegawa I Okita Y Arioka S Niina T |
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Institution: | Sanyo Electr. Co. Ltd., Kobe; |
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Abstract: | The off state current for polysilicon thin-film transistors for pixels in LCDs has been successfully reduced by introducing a polysilicon buffer layer between a polysilicon active layer fabricated by solid-phase-crystallisation (SPC) and a fused quartz substrate. Off-slate current of less than 1 pA under Vgs=-25 V at Vds=3 V was obtained for n-channel single-gate coplanar transistors using the buffer layer (400 Å) |
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