Small angle neutron scattering from oxygen precipitates in silicon |
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Authors: | H. Tietze-Jaensch D. Sieger R. Geick W. Zulehner A. de Geyer |
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Affiliation: | (1) Physikalisches Institut der Universität Würzburg, Am Hubland, W-8700 Würzburg, Fed. Rep. Germany;(2) Institut für Festkörperforschung, KFA Jülich, P.Box 1913, W-5170 Jülich, Fed. Rep. Germany;(3) Hahn Meitner Institut Berlin, Glienicker Strasse 100, W-1000 Berlin 39, Fed. Rep. Germany;(4) Wacker Chemitronic GmbH, P.Box 1140, W-8263 Burghausen, Fed. Rep. Germany;(5) Institut Laue-Langevin, P.Box 156X, F-38042 Grenoble Cedex, France |
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Abstract: | The formation of silicon oxide precipitates from Czochralski grown silicon depends on the time and temperature of the heat treatment as well as on the initial content of interstitially dissolved oxygen. Samples containing between 5×1017 Oi/cm3 and 13×1017 Oi/cm3 have been heated at 750° C for 96 h. SiO2 precipitates of various shape and size have been obtained and investigated by means of small angle neutron scattering (SANS) in the Q-range 0.05 Å–1<Q<0.2 Å–1. The obtained SANS patterns reveal a typical anisotropy of their intensity distribution, which splits into a central peak at Q<0.1 Å–1 due to the shape of the individual particles and a number of weak intensities for large Q-values, originating from a correlation between defects, possibly between the precipitates. While these correlation peaks in the SANS patterns are seen best for rather low values of about (5–7)×1017 Oi/cm3 oxygen content, the central peak anisotropy is most pronounced for higher values of ca 10×1017 Oi/cm3. The integrated intensity of the central peak increases with increasing initial oxygen content. For comparison, untreated samples of the same initial oxygen content do not reveal any anisotropic SAN scattering or a broadened central peak beam. |
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Keywords: | 61.12Dw 72.10 78.50G |
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