Observation of a shift of the mobility threshold in the D − band of silicon in an electric field according to the photoconductivity spectra |
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Authors: | A. P. Mel’nikov Yu. A. Gurvich L. N. Shestakov E. M. Gershenzon |
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Affiliation: | (1) Moscow Pedagogical State University, 119882 Moscow, Russia |
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Abstract: | We have discovered that the extrinsic photoconductivity spectrum of doped, uncompensated crystalline Si at liquid-helium temperatures is qualitatively different in electric fields E above a critical value E c . Specifically, the red edge of the photoconductivity, associated with photoionization of a neutral impurity, is shifted strongly to lower frequencies. This result is explained by the appearance of a mobility threshold in the D −-band (upper Hubbard band) and the shift of this threshold as E increases. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 2, 89–94 (25 January 1996) |
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