Isothermal liquid phase epitaxy of A 3 B 5 compounds under excessive vapor pressure of the B 5 component

A mathematical model has been developed of isothermal epitaxial growth of A³B⁵ films on the A³B⁵ substrates from flux by creating the excessive pressure of diatomic vapors of the B ⁵ component. The model is based on the diffusion equation with the nonlinear boundary condition at the evaporation surface and the thirdkind condition at the crystallization surface. The problem is solved numerically on a computer.