Electro- and magnetotransport in La0.67Ba0.33MnO3 nanosized films coherently grown on a vicinally polished (LaAlO3)0.29 + (SrAl0.5Ta0.5O3)0.71 substrate

The structure, orientation, and the response of electroresistance to magnetic field H and varying temperature T have been studied for 30-nm-thick La_0.67Ba_0.33MnO₃ (LBMO) films. The deviation of the 001] direction in manganite layers from the normal to the plane of the (LaAlO₃)_0.29 + (SrAl_0.5Ta_0.5O₃)_0.71 substrate strictly corresponds to the vicinal angle of the latter. The minimum yield determined from 227-keV proton scattering spectra is 0.025, signifying a high order of the cationic sublattice in the films. The biaxial compression of stable nuclei of the manganite phase affects their stoichiometry, thus contributing to the depletion of LBMO films in the alkaline-earth element. The maximum electroresistance values have been observed in the films grown at T _max ≈ 320 K, a temperature about 20 K lower than the Curie temperature of the corresponding bulk single crystals, and the maximum magnetoresistance (MR ≈ −0.42, μ₀ H = 2 T) occurs at T ≈ 300 K. At low temperatures (T < T _max/3) and μ₀ H < 0.45 T, the electroresistance response of LBMO films to a magnetic field materially depends on the anisotropic magnetoresistance and the intensity of hole scattering from domain walls; when μ₀ H > 0.5 T, the major current-carrier relaxation mechanism is the interaction with magnons.