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Radiation-induced defects in thin Cu(In,Ga)Se2 films on exposure to high-energy electron irradiation
Authors:A.?V.?Mudryi  author-information"  >  author-information__contact u-icon-before"  >  mailto:mudryi@ifttp.bas-net.by"   title="  mudryi@ifttp.bas-net.by"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author,V.?F.?Gremenok,A.?V.?Ivanyukovich,M.?V.?Yakushev,Ya.?V.?Feofanov
Affiliation:(1) Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, 17 P. Brovka Str., Minsk, 220072, Belarus;(2) Strathclyde University, Glasgow, UK
Abstract:At 4.2 K, the photoluminescence spectra of Cu(In,Ga)Se2 films irradiated by electrons with an energy of 5 MeV displayed the 0.93-and 0.79-eV bands that owe their origin to the radiative recombination of nonequilibrium charge carriers on radiation-induced defects. The position of the energy levels of the defects is determined and their nature is discussed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 805–808, November–December, 2005.
Keywords:Cu(In,Ga)Se2   photoluminescence  electron irradiation  defects
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