Semiconductor lasers |
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| Authors: | P. G. Eliseev |
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| Affiliation: | (1) Ac. Sci., P. N. Lebedev Physical Institute, Leninsky prospect 53, 117924 Moscow, USSR |
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| Abstract: | A review is presented on the achievements and current problems in the physics of semiconductor diode lasers. The topics covered are new heterostructures, ultrathin active layer structures, quantum well structures. Nonlinear effects are discussed caused by a refractive nonlinearity of the medium, including amplitude-phase coupling and nonlinear light scattering on the excess carrier concentration waves. |
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