Hydrogen isotope behavior and its interaction with post irradiated energetic helium in SiC |
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Authors: | Y Oya Y Onishi H Miyauchi T Nakahata Y Nishikawa K Okuno S Tanaka |
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Institution: | (1) Radioisotope Center, The University of Tokyo, 2-11-16, Yayoi, Bunkyo-ku, Tokyo 113-0032, Japan;(2) Radiochemistry Research Laboratory, Faculty of Science, Shizuoka University, 836, Oya, Suruga-ku, Shizuoka 422-8529, Japan;(3) Department of Quantum Engineering and Systems Science, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo Bunkyo-ku, Tokyo 113-8656, Japan |
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Abstract: | The D2
+ was irradiated into SiC up to the saturation and thereafter He+ irradiation was performed to elucidate interaction mechanism between hydrogen isotope retained in SiC and irradiated energetic
He+ by means of X-ray photoelectron spectroscopy (XPS) and thermal desorption spectroscopy (TDS). It was found that D was trapped
by both of Si and C by D2
+ irradiation and only D bound to Si interacted with irradiated He+ in the initial He+ irradiation stage. Some damaged structures were introduced into SiC by both of D2
+ and He+ irradiation. By heating after the irradiation experiments, most of SiC structure was recovered at the temperature above 1000
K. However, some free C was migrated toward the surface and aggregated on the surface of SiC. This fact indicates that the
C impurity would contaminate the plasma and/or the tritium breeding materials, which is thought to be contacted with the SiC
inserts. |
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Keywords: | |
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