Low-temperature thermal conductivity of tellurium-doped bismuth |
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Authors: | N. A. Red’ko V. D. Kagan N. A. Rodionov |
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Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
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Abstract: | Phonon thermal conductivities κ22 (?T ‖ C1) and κ33 (? T ‖ C3) of tellurium-doped bismuth with an electron concentration in the range 1.8 × 1019 ≤ nL ≤ 1.4 × 1020 cm?3 were studied in the temperature interval 2 < T < 300 K. The temperature dependence of the phonon thermal conductivity obtained on doped bismuth samples of both orientations exhibits two maxima, one at a low temperature and the other at a high temperature. The effect of various phonon relaxation mechanisms on the dependence of both phonon thermal conductivity maxima on temperature, impurity concentration, and electron density is studied. |
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