| 硅在cBN单晶合成中的行为 |
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| 引用本文： | 周艳平,阎学伟,赵廷河,马贤锋.硅在cBN单晶合成中的行为[J].高压物理学报,1995,9(3). |
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| 作者姓名： | 周艳平 阎学伟 赵廷河 马贤锋 |
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| 作者单位： | 中国科学院长春应用化学研究所 |
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| 摘 要： | 实验制备了复合氮化物Li8SiN4，并对合成温度、合成时间、气流量等因素的影响以及产物的稳定性进行了讨论。研究了Li8SiN4作为触媒添加剂时硅在cBN单晶合成中的作用。结果表明：cBN晶体多为截角八面体，晶面致密光滑；硅参与cBN的合成反应，并以SiO2的形式沉积在cBN表面。
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| 关 键 词： | cBN合成 复合氮化物 表面形态 |
| 收稿时间： | 1994-09-12; |
BEHAVIOR OF Li_8SiN_4 ON cBN SYNTHESIS |
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| Zhou Yanping,Yan Xuewei,Zhao Tinghe,Ma Xianfeng.BEHAVIOR OF Li_8SiN_4 ON cBN SYNTHESIS[J].Chinese Journal of High Pressure Physics,1995,9(3). |
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| Authors: | Zhou Yanping Yan Xuewei Zhao Tinghe Ma Xianfeng |
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| Institution: | Changchun Institute of Applied Chmistry, Chinese Academy of Sciences, Changchun 130022, China |
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| Abstract: | Ternary nitride Li8SiN4 is prepared at 700～750 ℃ in N2 by solid state reaction with LiH and Si3N4. Effects of reaction temperature, time and circumstance as well as stability on pure phase Li8SiN4 are studied in detail. Cubic BN is synthesized using Li-complex nitride and additive Li8SiN4 as catalyst-solvent in order to examine the behavior of silicon. The morphology and surface structure of cBN crystals are observed by SEM. Most of cBN crystals show off truncated octahedral shapes, and crystal surfaces are smooth and dense. The results suggest that Li8SiN4 involves in the reaction for hBN to cBN and is in the form of SiO2 deposited on its surface. |
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| Keywords: | cBN synthesis ternary nitride surface structure |
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