| 关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究 |
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| 引用本文： | 史力斌,任骏原,张凤云,张国华,余增强. 关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究[J]. 物理学报, 2007, 56(9): 5353-5358 |
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| 作者姓名： | 史力斌 任骏原 张凤云 张国华 余增强 |
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| 作者单位： | (1)北京大学物理学院，北京 100871; (2)北京科技大学应用科学学院物理系，北京 100083; (3)渤海大学物理系,锦州 121000 |
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| 基金项目： | 国家自然科学资金(批准号：10174006)资助的课题. |
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| 摘 要： | 利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)=U0(1-T/(Tc+δ))n(1-H/H关键词：2/Al2O3')" href="#">MgB2/Al2O3超导体电阻转变各向异性
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| 关 键 词： | MgB2/Al2O3 超导体 电阻转变 各向异性 |
| 文章编号： | 1000-3290/2007/56(09)/5353-06 |
| 收稿时间： | 2006-12-02 |
| 修稿时间： | 2006-12-02 |
A study on resistive transition and anisotropy of MgB2/Al2O3 superconducting thin films |
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| Shi Li-Bin,Ren Jun-Yuan,Zhang Feng-Yun,Zhang Guo-Hua and Yu Zeng-Qiang. A study on resistive transition and anisotropy of MgB2/Al2O3 superconducting thin films[J]. Acta Physica Sinica, 2007, 56(9): 5353-5358 |
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| Authors: | Shi Li-Bin Ren Jun-Yuan Zhang Feng-Yun Zhang Guo-Hua Yu Zeng-Qiang |
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| Affiliation: | 1Department of Physics, Bohai University, Jinzhou 121000, China; 2Department of Physics, School of Applied Science, University of Science and Technology Bering, Beijing 100083, China; 3School of Physics, Peking University, Bering 100871, China |
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| Abstract: | MgB2 thin films were deposited by e-beam on Al2O3(001)substrates. Resistive transition of the MgB2/Al2O3 was investigated in different magnetic fields applied parallel or perpendicular to the ab plane of the films by the standard four-probe method. An activation energy model is suggested to analyze quantitatively the activation energy of flux lines and resistive transition in whole transition temperature range. The anisotropy parameter γ=Hc2ab(0)/Hc2c(0)=2.26 was obtained by analyzing the upper critical field using the polynomial Hc2(t)=Hc2(0)+At+Bt2. |
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| Keywords: | MgB2/Al2O3 superconductor resistive transition anisotropy |
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