Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process |
| |
Affiliation: | 1.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;2.Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China;3.University of Chinese Academy of Sciences, Beijing 100049, China |
| |
Abstract: | Low metal-graphene contact resistance is important in making high-performance graphene devices. In this work, we demonstrate a lower specific contact resistivity of Au0.88 Ge0.12/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts. The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance. Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance. The specific contact resistivity decreases from 2.5×10-4 to 7.8×10-5 Ω·cm2 by pre-annealing at 300℃ for one hour, and continues to decrease to 9.5×10-7 Ω·cm2 after post-annealing at 490℃ for 60 seconds. These approaches provide reliable means of lowering contact resistance. |
| |
Keywords: | graphene AuGe/Ni/Au annealing contact resistance |
本文献已被 CNKI 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|