Atomic-layer-deposited Al_2O_3 and HfO_2 on InAlAs: A comparative study of interfacial and electrical characteristics |
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| Institution: | 1.School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China;2.School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China |
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| Abstract: | Al2O3 and HfO2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition (ALD). The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy (AR-XPS). It is demonstrated that the Al2O3 layer can reduce interfacial oxidation and trap charge formation. The gate leakage current densities are 1.37×10-6 A/cm2 and 3.22×10-6A/cm2 at +1 V for the Al2O3/InAlAs and HfO2/InAlAs MOS capacitors respectively. Compared with the HfO2/InAlAs metal-oxide-semiconductor (MOS) capacitor, the Al2O3/InAlAs MOS capacitor exhibits good electrical properties in reducing gate leakage current, narrowing down the hysteresis loop, shrinking stretch-out of the C-V characteristics, and significantly reducing the oxide trapped charge (Qot) value and the interface state density (Dit). |
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| Keywords: | high-k dielectric atomic layer deposition InAlAs characteristics |
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