| Depositing aluminum as sacrificial metal to reduce metal–graphene contact resistance |
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| 引用本文： | 毛达诚,金智,王少青,张大勇,史敬元,彭松昂,王选芸.Depositing aluminum as sacrificial metal to reduce metal–graphene contact resistance[J].中国物理 B,2016,25(7):78103-078103. |
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| 作者姓名： | 毛达诚 金智 王少青 张大勇 史敬元 彭松昂 王选芸 |
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| 作者单位： | Department of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| 基金项目： | Project by the National Science and Technology Major Project, China (Grant No. 2011ZX02707.3), the National Natural Science Foundation of China (Grant No. 61136005), the Chinese Academy of Sciences (Grant No. KGZD-EW-303), and the Project of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515003). |
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| 摘 要： | Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597 ? ·μm to sub 200 ? ·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.
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| 收稿时间： | 2015-12-11 |
Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance |
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| Institution: | Department of Microwave Devices and Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597 Ω·μm to sub 200 Ω·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods. |
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| Keywords: | graphene field effect transistor contact resistance |
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